0.1-Micrometer Gate-Length AlInAs/GaInAs/GaAs MODFET MMIC Process for Applications in High-Speed Wireless Communications
To ensure high performance of MODFETs used in HP's high-speed communications applications, their high-frequency signal, noise, and power characteristics must be optimized.
by Hans Rohdin, Avelina Nagy, Virginia Robbins, Chung-Yi Su, Arlene S. Wakita, Judith Seeger, Tony Hwang, Patrick Chye, Paul E. Gregory, Sandeep R. Bahl, Forrest G. Kellert, Lawrence G. Studebaker, Donald C. D'Avanso, Sigurd Johnsen
Article 4 - feb98a4.pdf
Appendix A - FET Parameters - feb98a4a.pdf
Appendix B - New Process Technology Offers Benefits in Test and Measurement and High-End Microwave and Millimeter-Wave Markets - feb98a4b.pdf
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