An Enhancement-Mode PHEMT for Single-Supply Power Amplifiers
To address the growing handset power amplifier needs for the emerging Personal Communications Services (PCS) markets, a 3-volt, single-supply, enhancement-mode pseudomorphic high-electron-mobility transistor (E-PHEMT) has been developed. The device exhibits + 33-dBm output power and 65% drain efficiency at 1.88 GHz.
by Der-Woei Wu, John S. Wei, Chung-Yi Su, Ray M. Parkhurst, Shyh-Liang Fu, Shih-Shun Chang, Richard B. Levitsky
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