Jianhua (Joshua) Yang

Biography

R&D Engineer
Huawei Technologies
2000 - 2001

Education:
University of Wisconsin - Madison
Ph. D , Materials Science Program
Thesis: Engineering and Characterizing Nanoscale Multilayers for Magnetic Tunnel Junctions

University of Wisconsin - Madison
Matster, Materials Science Program

Southeast University, Nanjing, China
B.S. , Materials processing Engineering

Authored and co-authored about 60 papers in academic journals, over 50 papers in international technical conferences and holding 6 granted and over 60 pending US Patents.

Research interests

Nanoelectronics, Nanoionics, Nanothermodynamics especailly for non-volatile memory technologies: fabrications, characterizations and applications.

Awards

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Publications

Selected recent papers:

• Memresistive switching mechanism for metal/oxide/metal nano-devices  Nature Nanotechnology 3, 429 (2008).
• Electroforming mechanism of metal/oxide/metal memristive switches , Nanotechnology, 20, 215201(2009).
• High switching endurance in TaOx memristive devices , Applied Physics Letters 97, 232102 (2010).
• A family of electronically reconfigurable nanodevices , Advanced Materials 21, 3754 (2009).
• Diffusion of adhesion layer metals controls nanoscale memristive switching , Advanced Materials 22, 4034 (2010).
• Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction , Applied Physics Letters 89, 202502 (2006).
• Dopant control by atomic layer deposition in oxide films for memristive switches  Chemistry of Materials 23, 123 (2011).
• Memristive switches enable stateful logic operations via material implication, Nature 464, 873 (2010).
• Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor , Advanced Materials, 23, 5633 (2011).
• Engineering nonlinearity into memristors for passive crossbar applications ,  Applied Physics Letters 100, 113501 (2012).
• Metal oxide memories based on thermochemical and valence change mechanisms , MRS Bulletin 37, 131 (2012).

Patents

6

Professional activities

Co-Editor:
Applied Phyisc A 

Book/Journal issue (Ed.):

1. 'Non-volatile memory based on  nanostructures ', 2011, NANOTECHNOLOGY 
2. 'Special Issue on memristive and resistive devices and systems ', 2011, APPLIED PHYSICS A   

Book chapter:
'Oxide based memristive nanodevices' in book 'Emerging Nonvolatile Memories', in press

Symposium Chair:

IEEE Nanotechnology 8th Annual Symposium on 'Emerging Non-Volatile Memory Technologies ', 2012, Santa Clara, CA, USA

Program/technical committees:

1. Executive Member, IEEE Nanotechnology Council ( SF & Bayarea)
2. The International Conference on Advances in Circuits, Electronics and Micro-electronics (CENICS);
3. 11th Non-Volatile Memory Technology Symposium  (NVMTS 2011)

Recent invited talks:

1. International Conference on Communications, Circuits and Systems (ICCCAS 2009) San Jose, California.
2. Seminar, 2009, University of California, Santa Cruz, California.
3. The 7th International Conference on Advanced Materials and Devices (ICAMD 2009), Jeju island, Korea.
4. Seminar, 2009, Seoul National University, Korea.
5. Invited Lecture, May/2009, UCSC-NASA Ames Research Center,California.
6. The 10th Non-volatile memory technology symposium (NVMTS 2009), Portland, Oregon.
7. International Symposium on Integrated Functionalities ( ISIF 2010), San Juan, Puerto Rico.
8. Advances in nonvolatile memory materials and devices (2010), Suzhou, China.
9. Seminar, 2010, Peking University, Beijing, China.
10. Seminar, 2010, Chinese Academy of Science, Beijing, China.
11. International Symposium on Materials for Enabling Nanodevices (ISMEN 2010), UCLA, California.
12. seminar, 2011, IEEE Computer Society, San Jose California.
13. The Frontier of Functional-Oxide Nano Electronics workshop, 2011, Tsukuba, Japan.
14. Seminar, 2011, IEEE Electronic Device Society, Santa Clara, California.
15. The 11th Non-volatile memory technology symposium (NVMTS 2011), Shanghai, China (Keynote).