Stan Williams - publications

2005

1. H. X. Ge, W. Wu, Z.Y. Li, G.Y. Jung, D. Olynick, Y.F. Chen, J.A. Liddle, S.Y. Wang, and R. S. Williams: “ Cross-linked polymer replica of a nanoimprint mold at 30 nm half-pitch,” Nano Lett 5 179-182 (2005).
2. P. J. Kuekes, D. R. Stewart and R. S. Williams: “The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits,” J. Appl. Phys. 97 , Art. No. 034301 (2005).
3. G.-Y. Jung, Z. Li, W. Wu, Y. Chen, D. L. Olynick, S.-Y. Wang, W. M. Tong and R. S. Williams: “Vapor-Phase Self-Assembled Monolayer for Improved Mold Release in Nanoimprint Lithography,” Langmuir 21 , 1158-61 (2005).
4. . S. Islam, S. Sharma, T. I. Kamins and R. S. Williams: “A novel interconnection technique for manufacturing nanowire devices,” Appl. Phys. A 80 , 1133-40 (2005).
5. P. J. Kuekes, W. Robinett, G. Seroussi and R. S. Williams: “Defect-tolerant demultiplexers for nano electronics constructed from error-correcting codes,” Appl. Phys. A 80 , 1161-64 (2005).
6. W. Wu, G.-Y. Jung, D. L Olynick, J. Strasnicky, Z. Li, X. Li, D. A. A. Ohlberg, Y. Chen, S.-Y. Wang, J. A. Liddle, W. M. Tong and R. S. Williams: “One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography,” Appl. Phys. A 80 , 1173-78 (2005).
7. G. Snider, P. J. Kuekes, T. Hogg and R. S. Williams: “Nanoelectronic Architectures,” Appl. Phys. A 80 , 1183-96 (2005).
8. G. Medeiros-Ribeiro, A. Malachias, S. Kycia, R. Magalhaes-Paniago, T. I. Kamins and R. S. Williams: “Elastic energy mapping of epitaxial nanocrystals,” Appl. Phys. A 80 , 1211-1214 (2005).
9. S. Sharma, T. I. Kamins and R. S. Williams: “Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition,” Appl. Phys. A 80 , 1225-1230 (2005).
10. Z. Li, B. Rajendran, T. I. Kamins, X. Li, Y. Chen and R. S. Williams: “Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulation,” Appl. Phys. A 80 , 1257-64 (2005).
11. T. I. Kamins, R. S. Williams and D. A. A. Ohlberg: “Annealing of chemically vapor deposited nanoscale Ti-Si islands on Si,” Appl. Phys. A 80 , 111279-1286 (2005).
12. C. Ji, R. Ragan, S. Kim, Y. A. Chang, Y. Chen, D. A. A. Ohlberg and R. S. Williams: “Surface reconstruction of Pt/Si(001),” Appl. Phys. A 80 , 1301-04 (2005).
13. D. Lee, D. K. Lim, S. S. Bae, S. Kim, R. Ragan, D. A. A. Ohlberg, Y. Chen and R. S. Williams: “Unidirectional hexsagonal rare-earth disilicide nanowires on vicinal Si(100) – 2×1,” Appl. Phys. A 80 , 1311-14 (2005).
14. D. A. A. Ohlberg, J. J. Blackstock, R. Ragan, S. Kim and R. S. Williams: “Optimization of in-vacuo template-stripped Pt surfaces via UHV STM,” Appl. Phys. A 80 , 1327-34 (2005).
15. R. Ragan, S. Kim, X. Li and R. S. Williams: “Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si (001),” Appl. Phys. A 80 , 1339-42 (2005).
16. C. A. Richter, D. R. Stewart, D. A. A. Ohlberg and R. S. Williams: “Electrical characterization of Al/AlOx/molecule/Ti/Al devices,” Appl. Phys. A 80 , 1355-62 (2005).
17. C. N. Lau, D. R. Stewart, M. Bockrath and R. S. Williams: “Scanned probe imaging of nanoscale conducting channels in Pt/alkanoic acid monolayer/Ti devices,” Appl. Phys. A 80 , 1373-78 (2005).
18. D. R. Stewart, D. A. A. Ohlberg, P. A. Beck, C. N. Lau and R. S. Williams: “Exponential temperature dependence and low-bias conductance anomaly in transport through Langmuir-Blodgett monolayer devices,” Appl. Phys. A 80 , 1379-84 (2005).
19. M. S. Islam, G. Y. Jung, T. Ha, D. R. Stewart, Y. Chen, S. Y. Wang, R. S. Williams: “Ultra-smooth platinum surfaces for nanoscale devices fabricated using chemical mechanical polishing,” Appl. Phys. A 80 , 1385-89 (2005).
20. P. J. Kuekes, W. Robinett, G. Seroussi and R. S. Williams: “Defect-tolerant interconnect to nanoelectronic circuits: internally redundant demultiplexers based on error-correcting codes,” Nanotechnology 16 , xxxx (2005).
21. P. J. Kuekes, W. Robinett and R. S. Williams: “Improved Voltage Margins Using Linear Error-Correcting Codes in Resistor-Logic Demultiplexers for Nanoelectronics,” Nanotechnology (submitted).

2004

1. M. S. Islam, S. Sharma, T. I. Kamins and R. S. Williams: “Ultrahigh-Density Silicon Nano-Bridges Formed between Two Vertical Silicon Surfaces,” Nanotechnology 15 , L5-8 (2004).
2. Z. Y. Li , T. I. Kamins, X. M. Li and R. S. Williams: “ Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures ” Surf. Sci. 554 , L81-6 (2004).
3. C. N. Lau, D. R. Stewart, D. A. A. Ohlberg, R. S. Williams, M. Bockrath: “ Direct observation of nanoscale switching centers in metal/molecule/metal structures ,” Nano Lett 4, 569-572 (2004).
4. G. Snider, P. J. Kuekes and R. S. Williams: “CMOS-like logic in defective, nanoscale crossbars,” Nanotechnology 15 , 881-91 (2004).
5. V. V. Osipov, M. Foygel, D. R. Stewart and R. S. Williams: “Small-polaron hopping via defect centres: anomalous temperature and voltage dependence of current through fatty-acid monolayers,” J. Phys. Conden. Matter 16 , 5705-12 (2004).
6. S. Sharma, T. I. Kamins and R. S. Williams: “Diameter control of Ti-catalyzed silicon nanowires,” J. Crystal Growth 267 , 613-18 (2004).
7. G. Y. Jung, S. Ganapathiappan, D. A. A. Ohlberg, D. L. Olynick, Y. Chen, W. M. Tong and R. S. Williams: “Fabrication of a 34 x 34 crossbar structure at 50 nm half-pitch by UV-based nanoimprint lithography,” Nano Lett . 4 , 1225-29 (2004).
8. T. I. Kamins, D. A. A. Ohlberg and R. S. Williams: “Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si,” J. Appl. Phys . 96 , 5195-5201 (2004).
9. R. Ragan, D. A. A. Ohlberg, J. J. Blackstock, S. Kim and R. S. Williams: “Atomic surface structure of UHV-prepared template- stripped platinum and single-crystal platinum (111),” J. Phys. Chem. B  108, 20187-20192 (2004).

2003

1. Z. Li, P. Beck, D. A. A. Ohlberg, D. R. Stewart and R. S. Williams: "Surface properties of platinum thin films as a function of plasma treatment conditions," Surf. Sci. 529, 410-18 (2003).
    
2. R. E. Rudd, G. A. D. Briggs, A. P. Sutton, G. Medeiros-Ribeiro and R. S. Williams: "Equilibrium Model of Bimodal Distributions of Epitaxial Island Growth," Phys. Rev. Letts. 90, 146101 (2003).
    
3. A.S. Alexandrov, A. M. Bratkovsky and R. S. Williams: "Bistable tunneling current through a molecular quantum dot", Phys. Rev. B 67, 075301 (2003).
    
4. T. I. Kamins, X. Li, and R. Stanley Williams, "Thermal stability of Ti-catalyzed Si nanowires," Appl. Phys. Lett. 82, 263-265 (2003).
    
5. Y. Chen, D. A. A. Ohlberg, X. Li, D. R. Stewart, R. S. Williams, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, D. L. Olynick and E. Anderson: "Nanoscale molecular-switch devices fabricated by imprint lithography", Appl. Phys. Lett. 82, 1610-12 (2003).
    

1. R. Magalhaes-Paniago, G. Medeiros-Ribeiro, A. Malachias, S. Kycia, T. I. Kamins, and R. Stan Williams, "Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering," Phys. Rev. B 66, 245312 (2002).
    
2. P. E. Kornilovitch, A. M. Bratkovsky, and R. S. Williams: "Bistable molecular conductors with a field-switchable dipole group", Phys. Rev. B 66, 245413 (2002).
    
3. C. M. Pelto, Y. A. Chang, Y. Chen and R. S. Williams: "Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaN," J. Appl. Phys. 92, 4283-9 (2002).
    
4. T.I. Kamins, R. S. Williams, T. Hesjedal, and S. J. Harris: "Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates," Physica E 13, 995-8 (2002).
    
5. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. S. Williams: "Effect of phosphorus on Ge/Si(001) island formation," Physica E 13, 974-7 (2002).
    
6. Y. Chen, D. A. A. Ohlberg, G. Medeiros-Ribeiro, Y. A. Chang and R. S. Williams: "Growth and evolution of epitaxial erbium disilicide nanowires on Si (001)," Appl. Phys. A 75, 353-61 (2002).
    
7. Y. Chen, D. A. A. Ohlberg, and R. S. Williams: "Nanowires of four epitaxial hexagonal silicides on Si(001)," J. Appl. Phys. 91, 3213-8 (2002).
    

2001

1. Y. Chen, D. A. A. Ohlberg, and R. S. Williams: "Epitaxial growth of erbium silicide nanowires on silicon(001)," Mat. Sci. Eng. B-Solid. 87, 222-226 (2001).
    
2. C. M. Pelto, Y. A. Chang, Y. Chen and R. S. Williams: "Issues concerning the preparation of ohmic contacts to n-GaN," Solid State Electron. 45,1597-1605 (2001).
    
3. T. I. Kamins and R. Stanley Williams, "Trends in nanotechnology: Self-assembly and defect tolerance," mstnews, no. 3/01, pp. 34-36 (2001).
    
4. T. I. Kamins, K. Nauka, and R. Stanley Williams, "Effect of self-assembled Ge nanostructures on Si surface electronic properties," Applied Physics A 73, 1-9 (2001).
    
5. T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, "Effect of phosphorus on Ge/Si(001) island formation," Applied Physics Letters 78, 2220-2222 (2001).
    
6. T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal and J. S. Harris, "Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms," J. Appl. Phys. 89, 1008-1015 (2001).
    

2000

1. W.L. Henstrom, C.P. Liu, J.M. Gibson, T.I. Kamins, and R.S. Williams, "Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion," Appl. Phys. Lett. 77, 1623-1625 (2000).
    
2. R. S. Williams, G. Medeiros-Ribeiro, T. I. Kamins, and D. A. A. Ohlberg: "Thermodynamics of the Size and Shape of Nanocrystals: Epitaxial Ge on Si(001)," Annu. Rev. Phys. Chem. 51, 527-51 (2000).
    
3. G.A.D. Briggs, D.P. Basile, G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "The incommensurate nature of epitaxial titanium disilicide islands on Si(001)" Surf. Sci. 457, 147-156 (2000).
    
4. C.-P. Liu, J.M. Gibson, D.G. Cahill, T.I. Kamins, D.P. Basile, and R. Stanley Williams, "Strain evolution in coherent Ge/Si islands," Phys. Rev. Lett. 84, 1958-1961 (2000).
    
5. Y. Chen, D. A. A. Ohlberg, G. Medeiros-Ribeiro, Y. A. Chang and R. S. Williams: "Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)," Appl. Phys. Lett. 76, 4004-6 (2000). [Chosen by Nature as one of 9 "Molecular Movers and Shakers" for 2000, Nature 408 (2000) 904]
    
6. T.I. Kamins, R. Stanley Williams, Y. Chen, Y.-L. Chang, and Y.A. Chang, "Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si," Appl. Phys. Lett. 76, 562-564 (2000).
    

1999

1. G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "Equilibrium size distributions of clusters during strained epitaxial growth," Materials Science and Engineering B 67, 31-38 (1999).
    
2. S.-H. Kim, G. Medeiros-Ribeiro, D. A. A. Ohlberg, R. S. Williams and J. R. Heath: "Individual and Collective Electronic Properties of Ag Nanocrystals," J. Phys. Chem. B 103, 10341-7 (1999).
    
3. P.D. Miller, C.-P. Liu, W.L. Henstrom, J.M. Gibson, Y. Huang, P. Zhang, T.I. Kamins, D.P. Basile, and R. Stanley Williams, "Direct measurement of strain in a Ge island on Si(001)," Appl. Phys. Lett. 75, 46-48 (1999).
    
4. C. P. Collier, E. W. Wong, M. Belohradsky, F. M. Raymo, J. F. Stoddart, P. J. Kuekes, R. S. Williams, and J. R. Heath: "Electronically Configurable Molecular-Based Logic Gates," Science 285, 391-4 (1999).
    
5. T.I. Kamins, R. Stanley Williams, and D. Basile, "Self-aligning of self-assembled Ge islands on Si(001)," Nanotechnology 10, 117-121 (1999).
    
6. G. Medeiros-Ribeiro, D. A. A. Ohlberg, R. S. Williams and J. R. Heath: "Rehybridization of electronic structure in compressed two-dimensional quantum dot superlattices ," Phys. Rev. B 59, 1633 (1999).
    
7. R. Stanley Williams, G. Medeiros-Ribeiro, T. I. Kamins, and D. A. A. Ohlberg, "Chemical thermodynamics of the size and shape of strained Ge nanocrystals grown on Si(001)," Accounts of Chemical Research 32, 425-433 (1999).
    
8. T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, W. Zhang and S. Y. Chou, "Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting," Appl. Phys. Lett. 74, 1773-1775 (1999).
    
9. G. Medeiros-Ribeiro, D. A. A. Ohlberg, D. R. Bowler, R, E. Tanner, G. A. D. Briggs and R. S. Williams: "Titanium disilicide nanostructures: two phases and their surfaces," Surf. Sci. 431, 116-127 (1999).
    
10. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. Stanley Williams, "Evolution of Ge Islands on Si(001) during Annealing," J. Appl. Phys. 85, 1159-1171 (1999).
     

1. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. Stanley Williams, "Dome-to-pyramid transition induced by alloying of Ge islands on Si(001)," Appl. Phys. A 67, 727-730 (1998).
    
2. A. Stavrides, J. Ren, M. Ho, J. Cheon, J. I. Zink, H. P. Gillis , and R. S.Williams: "Growth and characterization of diamond-like carbon films by pulsed laser deposition and hydrogen beam treatment," Thin Solid Films 335, 27-31 (1998).
    
3. R. S. Williams: "Computing in the 21st century: nanocircuitry, defect tolerance and quantum logic," Phil. Trans. R. Soc. Lond. A 356 1783-1791 (1998).
    
4. J. R. Heath, P. J. Kuekes, G. S. Snider and R. S. Williams: "A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology," Science 280, 1716 (1998).
    
5. R. Stanley Williams, Gilberto Medeiros-Ribeiro, Theodore I. Kamins, and Douglas A. A. Ohlberg, "Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)," J. Physical Chemistry B 102, 9605-9609 (1998).
    
6. T.I. Kamins, G.A.D. Briggs, and R.S. Williams, "Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001)," Appl. Phys. Lett. 73, 1862-1864 (1998).
    
7. G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "Annealing of Ge nanocrystals on Si(001) at 550∞C: Metastability of huts and the stability of pyramids and domes," Phys. Rev. B 58, 3533-3556 (1998).
    
8. O.V. Kolosov, M.R. Castell, C.D. Marsh, G.A.D. Briggs, T.I. Kamins, and R. Stanley Williams, "Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy," Phys. Rev. Lett. B 81, 1046-1049 (1998).
    
9. T.I. Kamins and R. Stanley Willams, "A Model for Size Evolution of Pyramidal Ge Islands on Si(001) during Annealing," Surface Science 405, L580-L586 (1998).
    
10. J. Z. Ren, G. A. Rose, R. S. Williams, C. H. Booth and D. K. Shuh: "Atomic Structure and Phase Transitions in Disordered Ti1-xGaxN Thin Films Grown by Pulsed Laser Deposition," J. Appl. Phys. 83, 7613 (1998).
     
11. F. Parsapour, D. F. Kelley and R. S. Williams: "Spectroscopy of Eu3+-Doped PtS2 Nanoclusters," J. Phys. Chem. B 102, 7971 (1998).
     
12. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, "Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes," Science 279, 353-355 (1998).
     

1997

1. T.I. Kamins and R. Stanley Williams, "Lithographic positioning of self-assembled Ge islands on Si(100)," Appl. Phys. Lett. 71, 1201-1203 (1997).
    
2. S. J. Anz, K. Nafisi, J. S. Allen, A. M. Russell and R. S. Williams: "Detection of millimonolayers of oxygen on GaAs(001): Observation of edge-effect rainbow enhancement in impact collision ion-scattering spectroscopy," Surface Science 373, 371 (1997).
    
3. D. Feiler, R. S. Williams, A. A. Talin, H. Yoon and M. S. Goorsky: "Pulsed laser deposition of epitaxial AlN, GaN and InN thin films on sapphire (0001)," J. Crystal Growth 171, 12 (1997).
    
4. S. J. Anz and R. S. Williams: "Giant yield enhancements for keV ion scattering: the edge-effect rainbow," Surface Science Letters 372, L323 (1997).
    
5. T.I. Kamins, E.C. Carr, R.S. Williams, and S.J. Rosner, "Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures," J. Appl. Phys. 81, 211-219 (1997)
    

Books Edited

1. Nanotechology Research Directions: IWGN Workshop Report (Vision for Nanotechnology R&D in the Next Decade, M. C. Roco, R. S. Williams and P. Alivisatos, eds., September 1999 (published by the National Science and Technology Council and available at www.nano.gov and also by Kluwer Academic Publishers, ISBN 0-7923-6220-9, 2000). This report led to the National Nanotechnology Initiative, and was adopted by the Office of the President as part of the US fiscal year 2001 budget, and subsequently approved by Congress for funding at $422M in fiscal year 2001 and at $518M in fiscal 2001.