A Comparison of Processes and Challenges Between Organic, a-Si:H, and Oxide TFTs for Active Matrix Backplanes on Plastic
de la Fuente Vornbrock, Alejandro; Almanza-Workman, Marcia; Dickin, Fraser; Elder, Richard E.; Garcia, Robert A.; Holland, Edward; Jackson, Warren; Jam, Mehrban; Jeans, Albert; Kim, Han-Jun; Kwon, Ohseung; Luo, Hao; Maltabes, John; Mei, Ping; Perlov, Craig; Rudin, John C.; Smith, Mark; Trovinger, Steven; Zhao, Lihua; Taussig, Carl P.
Keyword(s): flexible electronics; thin film transistors; flexible displays; organic semiconductors; amorphous silicon; zinc oxide
Abstract: Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a- Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a- Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies.
External Posting Date: April 6, 2012 [Fulltext]. Approved for External Publication
Internal Posting Date: April 6, 2012 [Fulltext]