HP Labs Technical Reports



Click here for full text: PDF

Dopant-Type Selective Electroless Photoetching of Zn-Diffused InP and InGaAs/InP Heterostructures

Williamson, Jim B.; Carey, Kent W.

HPL-92-155

Keyword(s):

Abstract: Localized electroless photoetching is used successfully to visualize the p-n junction in Zn-diffused InP and InGaAs/InP heterostructures. This technique is superior to KFeCN-based etching due to greater dopant selectivity and low dark etch rate.

Back to Index

[Research] [News] [Tech Reports] [Palo Alto] [Bristol] [Japan] [Israel] [Site Map] [Home] [Hewlett-Packard]