HP Labs Technical Reports

Dopant-Type Selective Electroless Photoetching of Zn-Diffused InP and InGaAs/InP Heterostructures

Williamson, Jim B.; Carey, Kent W.

HPL-92-155

Keyword(s):

Abstract: Localized electroless photoetching is used successfully to visualize the p-n junction in Zn-diffused InP and InGaAs/InP heterostructures. This technique is superior to KFeCN-based etching due to greater dopant selectivity and low dark etch rate.

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