HP Labs Technical Reports

High Density, Planar Zn-Diffused InGaAs/InP Photodetector Arrays With Extended Short Wavelength Response

Williamson, Jim B.; Carey, Kent W.; Kellert, F. G.; Baun, D. M.; Hodge, L. A.; Loncasty, D. W.



Abstract: We describe a unique 512 element, Zn-diffused, InGaAs/InP photodetector array. This array combines, for the first time, the features of leakage current density less than 10(super-4) A/cm(super2) element spacing of 4.5 um, and extended wavelength response from 600 nm to 1650 nm.

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