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Extension of Bandgap Broadening Model for Quantum Mechanical Correction in Sub-Quarter Micron MOS Devices to Accumulation Layer

Oh, Soo-Young; Vande Voorde, Paul; Yu, Zhiping; Dutton, Robert W.

HPL-96-42

Keyword(s): MOS device, quantum-mechanical effect


Abstract: We report in this paper an extended bandgap broadening analytical model for quantum mechanical (QM) correction in MOS structures with sub-quarter micron feature size, which is applicable to both inversion and accumulation layers. Device simulation shows excellent agreement with the measured C-V data for MOS capacitors with oxide thickness of approximately 30 angstroms.

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