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August 1997, Article 12

August 1997, Article 12

MOSFET Scaling into the Future

2D process and device simulators have been used to predict the performance of scaled MOSFETs spanning the 0.35-um to 0.07-um generations. Requirements for junction depth and channel doping are discussed. Constant-field scaling is assumed. MOSFET drive current remains nearly constant from one generation to the next and most of the performance improvement comes from the decreasing supply voltage. Gate delay decreases by 30% per generation, nearly the same trend as previous generations. However, this performance gain comes at the price of much higher off-state leakage because of the reduction of the threshold voltage. Various solutions to this high leakage are discussed.

by Paul Vande Voorde

Article 12 - aug97a12.pdf

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