TEM and EELS Study on TaOx-Based Nanoscale Resistive Switching Devices
Share- Author(s): Norris, Kate J.; Zhang, Jiaming; Musunuru, Srinitya; Zhang, Max; Samuels, Katy; Yang, J. Joshua; Kobayashi, Nobuhiko P.
- HP Laboratories
- HPL-2015-22
Abstract: Resistance switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage potential, has propelled a field of research to form improved non-volatile memory device. Tantalum oxide has been one of the leading candidates for the dielectric component of resistance switching devices. Presented here is a structural and chemical investigation of 55nm TaOx devices in the virgin, forming on, and switched off (reset) states for comparison using cross sectional TEM techniques including HRTEM, EELS, and EFTEM to gain further understanding of this material system. The nanodevices imaged in this study were shown to have high endurance (~10^7 cycles) and low current requirements. Unique features found in this study are in agreement with previous hypotheses made by various rese:wqarchers based on X-ray fluorescence microscopy of micron-scale devices, indicating a variation in oxygen concentration around the switching area. In this presentation we will discuss the switching mechanism of nanoscale TaOx resistive switching devices based on the chemical and physical features found in the cross sectioned nanodevices.
1 Pages
- External Posting Date: External Posting Date: March 21, 2015 [Abstract Only]. Approved for External Publication - External Copyright Consideration
- Internal Posting Date: Internal Posting Date: March 21, 2015 [Fulltext]