Low-voltage Si-Ge Avalanche photodiode
Share- Author(s): Huang, Zhihong; Liang, Di; Santori, Charles; Fiorentino, Marco; Beausoleil, Raymond G.
- HP Laboratories
- HPL-2015-28
- Keyword(s): APD; low voltage
Abstract: Here we report a Si-Ge avalanche photodiode (APD) with a breakdown voltage of only -10V. The highest measured bandwidth is 15.8GHz for a 20µm diameter device. A bandwidth of 13.2 GHz at gain of 22.2 is obtained for the same device, giving a 290GHz gain-bandwidth product at 1550nm wavelength.
2 Pages
- External Posting Date: External Posting Date: April 6, 2015 [Fulltext]. Approved for External Publication
- Internal Posting Date: Internal Posting Date: April 6, 2015 [Fulltext]